The KOMDIV-32 () is a family of 32-bit microprocessors developed and manufactured by the Scientific Research Institute of System Development (NIISI) of the Russian Academy of Sciences. The manufacturing plant of NIISI is located in Dubna on the grounds of the Kurchatov Institute. The KOMDIV-32 processors are intended primarily for spacecraft applications and many of them are radiation hardened (rad-hard).
These microprocessors are compatible with MIPS R3000 and have an integrated MIPS R3010 compatible floating-point unit.
Overview
Details
1V812
- 0.5 üm CMOS process, 3-layer metal
- 108-pin ceramic quad flat package (QFP)
- 1.5 million transistors, 8KB L1 instruction cache, 8KB L1 data cache, compatible with IDT 79R3081E
1890VM1T
- 0.5 üm CMOS process
1890VM2T
- 0.35 üm CMOS process
1990VM2T
5890VM1â
5890VE1â
- 0.5 üm SOI CMOS process
- 240-pin ceramic QFP
- radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 ðC
- System-on-a-chip (SoC) including PCI master / slave, 16 GPIO, 3 UART, 3 32-bit timers
- cache (8KB each for data and instructions)
- second-sourced by MVC Nizhny Novgorod under the name 1904VE1T () with a clock rate of 40 MHz
1900VM2T
- development name Rezerv-32
- 0.35 üm SOI CMOS process
- 108-pin ceramic QFP
- radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 ðC
- triple modular redundancy on block level with self-healing
- both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE)
1907VM014
- 0.25 üm SOI CMOS process; manufacturing to be moved to Mikron
- 256-pin ceramic QFP
- production planned for 2016 (previously this device was planned to go into production in 2014 under the name 1907VE1T or 1907VM1T)
- radiation tolerance to not less than 200 kRad
- SoC including SpaceWire, GOST R 52070-2003 (Russian version of MIL-STD-1553), SPI, 32 GPIO, 2 UART, 3 timers, JTAG
- cache (8KB each for data and instructions)
1907VM038
1907VM044
- development name Obrabotka-10
- 0.25 üm SOI CMOS process; manufactured by Mikron
- 256-pin ceramic QFP
- SoC including SpaceWire, GOST R 52070-2003 (MIL-STD-1553), SPI, 32 GPIO, 2 UART, 3 timers, JTAG
- radiation tolerance to not less than 200 kRad
- triple modular redundancy in processor core
- both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE) with 1 parity bit per byte for cache and Hamming code for registers
- SECDED for external memory
- working temperature from -60 to 125 ðC
1907VM056
1907VM066
- development name Obrabotka-26
- 0.25 üm silicon on insulator (SOI) CMOS process; manufactured by Mikron
- 407-pin ceramic PGA
- SoC including 4-channel SpaceWire, GOST R 52070-2003 (MIL-STD-1553), SPI, IòC, RapidIO, GPIO, 2 UART, 3 timers, JTAG, PCI, co-processor for image processing
- cache (8KB each for data and instructions)
1907VK016
See also
References