The International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings.
The most recent ICDS (the 33nd) was at Fudan University, Shanghai, September 15âÂÂ19th, 2025. Both the Corbett and Haller prizes were awarded at the meeting.
The next ICDS (34) will be at the University of Strathclyde, Glasgow between July 26âÂÂ29th, 2027, and will include a tutorial day on the 25th.
The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers. The prize has been awarded at every ICDS since 1995.
Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students. The Haller Prize is given to the best graduate student(s) presentation at each ICDS since 2023.
The ICDS venue often rotates between locations in Europe, North America and the far East.