This article contains crystal structure data used in the article crystal structure of boron-rich metal borides.
<sup>a</sup> The number n in the atom designation Bn,n refers to the B<sub>12</sub>-nth icosahedron to which the Bn,n belongs. Si6.n and B6.n belong to the B<sub>12</sub>Si<sub>3</sub> unit.
<sup>b,c,d</sup> The Si and B sites are in the same interstice, which is assumed to be fully occupied by both Si and B atoms with occupancies of Occ.(Si) and Occ.(B), respectively, where Occ.(Si)+Occ.(B) = 1. Position of the boron atom was adjusted independently by fixing the thermal parameters at the same value as for the Si atom in the same interstice.
<sup>e</sup> The temperature factor is fixed at this value.
<sup>f</sup> Equivalent isotropic temperature factor. It was calculated from the relation B<sub>eq.</sub> = 4/3(a<sup>2</sup>ò<sub>11</sub> + b<sup>2</sup>ò<sub>22</sub> + c<sup>2</sup>ò<sub>33</sub>).
Structure data for homologous compounds.
<sup>a</sup> Obtained by structure analysis.
<sup>a</sup> Anisotropic thermal factors are applied to Sc sites, and U<sub>eq</sub> (one-third of the trace of the orthogonalized U<sub>ij</sub> tensor) is listed in these columns.
<sup>a</sup> Anisotropic thermal factors are applied to Sc sites, and U<sub>eq</sub> (one-third of the trace of the orthogonalized U<sub>ij</sub> tensor) is listed in these columns.
<sup>a</sup> Anisotropic thermal factors are applied to Sc sites, and U<sub>eq</sub> (one-third of the trace of the orthogonalized U<sub>ij</sub> tensor) is listed in these columns.